Recommendation - 1 Huawei

CN118829235A - Substrate, preparation method thereof, chip and terminal

The recommendation discloses a substrate, its preparation method, a chip, and a terminal, pertaining to the semiconductor technology field. It aims to enhance the interaction between a bulge and a carbon nanotube by increasing electrostatic and van der Waals forces, thereby addressing issues such as poor uniformity, overlapping, aggregation, insufficient density, and challenging spacing control of carbon nanotubes on a substrate. The substrate consists of a base layer and a channel layer composed of multiple carbon nanotubes. Additionally, the substrate's surface features multiple adjacent bulges, with carbon nanotubes positioned between each pair of bulges.

Summary of the Solution

Technology Provider: Huawei Technologies Co Ltd

Solution Provided: The application proposes a substrate, its preparation method, a chip, and a terminal to enhance the interaction force between CNTs and the substrate.

Structural Innovation:

• The substrate consists of a channel layer containing multiple CNTs.
• The surface of the substrate has multiple protrusions (bulges) arranged adjacently.
• CNTs are positioned between two adjacent protrusions, ensuring better contact and alignment.

Mechanism of Improved Interaction: Increasing the interaction force between a bulge and a carbon nano tube by increasing the electrostatic force and van der Waals force between the bulge and the carbon nano tube.

Key Benefits:

• Enhanced adhesion of CNTs to the substrate.
• Improved alignment and uniformity of CNTs.
• Reduced overlapping and agglomeration issues.
• Better density and interval control, optimizing CNT placement.
• Improved transistor performance due to precise CNT arrangement.

Application Areas: Semiconductor Chip

Summary of Substrate, preparation method thereof, chip and terminal

Objective: Addresses technical challenges related to poor uniformity, overlapping, aggregation, insufficient density, and difficult spacing control of carbon nanotubes           (CNTs) on a substrate.

Solution Provided: The application proposes a substrate, its preparation method, a chip, and a terminal to enhance the interaction force between CNTs and the substrate.

Structural Innovation:

• The substrate consists of a channel layer containing multiple CNTs.
• The surface of the substrate has multiple protrusions (bulges) arranged adjacently.
• CNTs are positioned between two adjacent protrusions, ensuring better contact and alignment.

Mechanism of Improved Interaction:

• Electrostatic Force:
  • Unpaired electrons on the protrusions create unsaturated dipoles.
  • These dipoles induce dipoles on the CNT surface, generating electrostatic attraction.
  • Since CNTs are in contact with two protrusions, electrostatic interaction is stronger.
• Van der Waals Force:
  • Increased contact area between CNTs and protrusions enhances Van der Waals forces.
  • Compared to a flat substrate, the bulged surface improves adhesion of CNTs.

Foundation Year: 1987

Industry:

• Telecom equipment
• Networking equipment
• Consumer electronics
• Semiconductors
• Artificial intelligence
• Automation
• Cloud computing
• Internet of things

Location: Shenzhen, Guangdong, China

Website: https://www.huawei.com/en/

Originally specializing in phone switch manufacturing, Huawei has expanded its operations to over 170 countries, now engaging in telecommunications network infrastructure development, equipment production, operational support, consulting services, and consumer electronics manufacturing. In 2012, it surpassed Ericsson to become the world's largest telecommunications equipment manufacturer. By 2018 and 2020, Huawei had outpaced Apple and Samsung, respectively, to become the leading global smartphone manufacturer. As of 2024, its primary business remains in telecommunications equipment.

Huawei, through its wholly owned subsidiary HiSilicon, is among China's leading domestic chip designers. It often collaborates with Semiconductor Manufacturing International Corporation (SMIC) for chip production. As of April 2024, Huawei is actively involved in the construction and development of five semiconductor fabrication plants.

Huawei has been actively involved in research and development related to carbon nanotubes (CNTs), particularly focusing on their applications in electronics and materials science. Huawei researchers have investigated the creation of lightweight, high-performance electrical composites by integrating carbon nanotubes with copper. These advanced materials are designed as alternatives to conventional copper wires, offering improved electrical conductivity and reduced weight, making them highly suitable for a range of electronic applications.

The integration of carbon nanotubes into various applications, including flexible electronics and advanced materials, is a focus area for Huawei. The unique properties of CNTs, such as high strength and conductivity, make them suitable for use in cutting-edge technologies.

Read Also: Carbon Nanotube Transistors - Overview and Structure

Recommendation – 2 DAEGU GYEONGBUK INST SCIENCE & TECH

US20240204078A1 - Method of manufacturing field-effect transistor array by direct carbon nanotube printing and field effect transistor array manufactured by the same

The recommendation discloses a method for manufacturing a field-effect transistor (FET) array using direct carbon nanotube (CNT) printing, as well as the resulting FET array. The method allows for precise deposition by adjusting CNT concentration at specific locations on a substrate, without restrictions on the substrate type. It enables accurate CNT placement at electrode gaps through printing, ensuring minimal contact with substrate oxides, which helps reduce noise and enhance sensitivity. Additionally, this approach lowers manufacturing costs and processing time by eliminating extra steps, while the low-temperature process makes it adaptable for various electronic applications.

Summary of the Solution

Technology Provider: DAEGU GYEONGBUK INST SCIENCE & TECH

Substrate Preparation:

• An insulating layer is formed on a substrate.
• A metal layer is deposited and patterned to create source and drain electrode pairs.
• Electrode thickness: 10 to 200 nm.
• Electrode gap: 0.1 to 2 μm.

CNT Ink Preparation:

• CNT dispersion is obtained by sonicating a CNT film in a polar solvent.
• The dispersion is then centrifuged, and the supernatant is extracted.
• Polar solvents used: Pyrrolidone-based solvents (e.g., CHP, NMP, NEP) or water.
• CNT length: 0.1 to 4 μm.

Inkjet Printing Process:

• CNT ink is jetted between the source and drain electrodes.
• The ink spreads along the electrodes, forming a thin film.Jetting volume: 0.1 to 10 picoliters (pl).
• Contact angle: 0 to 90 degrees.Contact angle differential (substrate vs. electrodes): 5 to 60 degrees.

Additional Processing: Oxygen plasma or UV ozone pretreatment may be performed before CNT printing

Key Benefits:

• High Precision & Controlled Deposition.
• Improved Electrical Performance
• Better adhesion and conductivity.

Application Areas: Biosensors and other electronic applications

Summary of Substrate, preparation method thereof, chip and terminal

Objective: Describes a method for manufacturing a field-effect transistor (FET) array using carbon nanotube (CNT) inkjet printing, along with the resulting FET array.

Manufacturing Process:

• Substrate Preparation:
  • An insulating layer is formed on a substrate.
  • A metal layer is deposited and patterned to create source and drain electrode pairs.
  • Electrode thickness: 10 to 200 nm.
  • Electrode gap: 0.1 to 2 μm.
• CNT Ink Preparation:
  • CNT dispersion is obtained by sonicating a CNT film in a polar solvent.
  • The dispersion is then centrifuged, and the supernatant is extracted.
  • Polar solvents used: Pyrrolidone-based solvents (e.g., CHP, NMP, NEP) or water.
  • CNT length: 0.1 to 4 μm.
  • CNT concentration: 1×10⁻⁶ to 1.5×10⁻⁵ wt% of the total ink weight.
  • Ultrasonication duration: 0.5 to 5 hours.
• Inkjet Printing Process:
  • CNT ink is jetted between the source and drain electrodes.
  • The ink spreads along the electrodes, forming a thin film.
  • Jetting volume: 0.1 to 10 picoliters (pl).
  • Contact angle: 0 to 90 degrees.
  • Contact angle differential (substrate vs. electrodes): 5 to 60 degrees.
• Additional Processing:
  • Oxygen plasma or UV ozone pretreatment may be performed before CNT printing.

Field-Effect Transistor Array Specifications:

• The substrate diameter ranges from 2 to 12 inches.
• Each substrate contains 20 to 50 chips.
• Each chip includes 50 to 100 pairs of source and drain electrodes.
• The FET array consists of 1 to 10 CNTs bridging each electrode pair.

Applications:

• The manufactured FET array can be used in biosensors and other electronic applications.

Read Also: Carbon Nanotube Transistors - Fabrication & Key Challenges

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